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SiC MOSFET vs. Si IGBT in Electric Vehicle Applications

Tech Talk

Available until December 6, 2019

In the race to make the most efficient electric vehicle, the design of power electronics converters plays a vital role. Power losses, breakdown voltage, switching times, and thermal conductivity of semiconductor devices are critical factors when designing power electronics converters.

Silicon power devices are widely used in power converters but suffer from major limitations such as low bandgap energy, low thermal conductivity, and switching frequency limitations. Wide bandgap devices, such as Silicon Carbide (SiC) and Gallium Nitride (GaN), are gaining tremendous attention in power electronics designs because of rapid advancements in manufacturability and commercial availability. These devices provide large bandgap, enabling higher breakdown voltage and thermal conductivity. Wide bandgap devices are replacing silicon devices in high-voltage, high-switching frequency, and high-temperature applications.

This 20-minute Tech Talk compares SiC MOSFET and Si IGBT in electric vehicle applications. In addition, it analyzes a quantitative estimate of the system improvement based on simulation results using Synopsys’ SaberRD virtual prototyping solution.


Datsen Davies Tharakan, Saber Applications Engineer, Synopsys

Datsen Davies Tharakan graduated from the University of Nottingham, U.K., with a master’s degree in power electronics and drives. With more than five years of experience as Saber Applications Engineer, he is actively involved in supporting automotive and aerospace customers with design examples, technical articles, and solutions for power electronics design simulations, convergence, and modeling. Before joining Synopsys, Datsen was involved in designing various DC/DC converter topologies at Chirra Power Technologies, India.


Lisa Arrigo, SAE International


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