Materials for Electronics Manufacturing

Wed, Dec 18, 2013 1:00 PM EST


Materials for Electronics Manufacturing

Success in electronics manufacturing increasingly relies on the materials used in production and packaging. More than 50 different elements from the periodic table are now used in semiconductor manufacturing, and the list grows even longer when you consider the requirements of flexible/printed electronics, LEDs, compound semiconductors, power electronics, displays, MEMS and bioelectronics. SEMI expects the combined market for wafer fab materials and packaging materials to surpass $50 billion in 2013. In this webcast experts will focus on changing material requirements, the evolving material supply chain, recent advances in process and packaging materials and substrates, and the role new materials such as carbon nanotubes will play in the future.


Paul Besser, Ph.D.
Dr. Paul Besser graduated with honors from North Carolina State University (1988) and earned his M.S. (1990) and Ph. D. (1993) from Stanford University in Materials Science and Engineering.  He is currently a Fellow in the CTO Organization at GLOBALFOUNDRIES, Inc.   He was previously a Fellow in the Technology Research Group at Advanced Micro Devices before being Senior Director of Technology Development at Unity Semiconductor and Invisage Technologies. He has co-authored 93 research publications and holds >200 U.S. patents.  He co-organized four Materials Research Society (MRS) symposiums and has given tutorials at the MRS and IEEE IRPS conferences. He was a meeting chair for the 2009 Spring Materials Research Society (MRS) meeting and 2011 Advanced Metallization Conference (AMC). He currently serves on the Advisory Boards for Materials Science and Engineering Departments at Stanford University and NCSU.


Dr. Maud Vinet, Advanced CMOS Manager, CEA/Leti
Dr. Maud Vinet is the Advanced CMOS Manager at CEA/Leti. At IEDM 2013, she provided an invited talk on “FDSOI nanowires: an opportunity for hybrid circuit with Field Effect and Single Electron Transistors,” and “High Performance UTBB FDSOI Devices Featuring 20nm Gate Length for 14nm Node and Beyond.” Vinet received her degree in Physics and M.Sc. in Experimental Methods for Physics in 1997 from Ecole Nationale Supérieure de Physique de Grenoble (ENSPG) and Université Joseph Fourier respectively.



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